silvaco atlas simulations (Silvaco Inc)
86
Structured Review
Silvaco Inc
silvaco atlas simulations
Silvaco Atlas Simulations, supplied by Silvaco Inc, used in various techniques. Bioz Stars score: 86/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/silvaco+atlas/atlas+silvaco+tcad/pm42086632-47-19-19
Average 86 stars, based on 1 article reviews
Silvaco Atlas Simulations, supplied by Silvaco Inc, used in various techniques. Bioz Stars score: 86/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/silvaco+atlas/atlas+silvaco+tcad/pm42086632-47-19-19
Average 86 stars, based on 1 article reviews
silvaco atlas simulations - by Bioz Stars,
2026-09
86/100 stars
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other:Article Title: Radiation‐Induced Degradation and Charge‐Collection Stability in 4H‐SiC p–i–n Betavoltaic Cells Article Snippet: Kyeong Min Kim performed the simulation analysis using Article Title: Hydrogen gas (H2) sensor based on GaAs/GaSb heterojunction charge plasma TFET: a simulation study Article Snippet: 2019; Dodds et al. 2015; Jacobson et al. 2005; Cho et al. 2018).. These attributes make it an attractive energy carrier for fuel cell vehicles, aerospace systems, and a wide range of industrial applications.. However, H2 also presents significant safety challenges due to its low auto-ignition temperature (250–400°C), high diffusion coefficient in air (0.6 cm2/s), and broad flammability range (4–75% in air) (Mirzaei et al. 2019; Cho et al. 2018; Gu et al. 2012). Article Title: Ultrahigh-gain colloidal quantum dot infrared avalanche photodetectors. Article Snippet: Colloidal quantum dots (CQDs) are promising for infrared photodetectors with high detectivity and low-cost production.. Although CQDs enable photoinduced charge multiplication, thermal noise in low-bandgap materials limits their performance in IR detectors.. Here we present a pioneering architecture of a CQD-based infrared photodetector that uses kinetically pumped avalanche multiplication. Article Title: High Sensitivity of Dielectrically Modulated Tunnel Field Effect Transistor for Biosensor Applications Article Snippet: The Dielectrically Modulated Full Gate Tunnel Field Effect Transistor (FET) with dual nanocavities, as described in the paper, is a novel device designed as a label-free biosensor for detecting cancer cell biomolecules.. This biosensor utilizes the principles of field-effect transistors and incorporates nanocavities to enhance the detection sensitivity.. The simulations are conducted using the Silvaco Atlas model, which allowed for the analysis of the device’s electrical characteristics in the presence of various cancer cell biomolecules. Article Title: Efficiency improvement of graphene/AlGaAs/GaAs Schottky junction solar cells by minimizing optical losses through front and rear surface texturing. Article Snippet: In this paper, we simulated the design of Gr/AlGaAs/GaAs heterojunction Schottky solar cells using Article Title: Analytical Modeling of Oppositely Doped Core‐Shell Junctionless Nanowire Transistor Considering Fringe Capacitance and Dual Material Gate Article Snippet: The simulation results from Software:Article Title: Optimizing key parameters to enhance the performance of lead-free perovskite solar cells with a Cs2AgBiCl6 absorber layer using SCAPS-1D simulation Article Snippet: Lead-free double perovskites, characterized by the general formula A2BBX6, present a promising alternative to address the instability and toxicity issues associated with lead halide perovskite solar cells.. Nevertheless, the advancement of lead-free perovskite solar cells is hindered by several challenges.. Despite these obstacles, optimizing various parameters can facilitate the development of leadfree perovskite solar cells. Article Title: Near-infrared germanium PIN-photodiodes with >1A/W responsivity Article Snippet: Current-voltage (I-V) characteristics of the photodiodes were measured in the dark with a semiconductor parameter analyzer (Agilent/HP 4155C). .. Carrier profiles and electric field near the front surface were simulated using the commercial software |